2SC4702 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCEO = 300 V - Small Cob Cob = 1.5 p F Typ. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “XV- ”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) h FE f T Cob Min 300 300 5 - - 60 - - Typ - - - - - - 80 1.5 Max - - - 0.1 0.5 150 - - MHz p F Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 250 V, IE = 0 I C = 30 m A, IB = 3 m A VCE = 6 V, IC = 2 m A VCE = 6 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 Collector Current IC (m A) Typical Output Characteristics 10 100 80 Pulse Test 60 50 6 40 4 30 20 IB = 10 µA 0 50 100 Ambient Temperature Ta (°C) 150 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 100 Collector Current IC (m A) Ta = 75°C DC Current Transfer Ratio h FE 25 - 25 1,000 DC Current Transfer Ratio vs. Collector Current Ta = 75°C 100 - 25 1.0 VCE = 6 V Pulse Test 0.1 10 VCE = 6 V Pulse Test 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1.0 10 Collector Current IC (m A) Collector to Emitter Saturation Voltage vs. Collector Current 10 IC/IB = 10 Pulse Test 1.0 Ta = 75°C 25 - 25 0.1 Gain Bandwidth Product f T (MHz) Gain Bandwidth Product vs. Collector Current 1,000 VCE = 6...