2SC4829
2SC4829 is NPN Transistor manufactured by Hitachi Semiconductor.
Features
- High frequency characteristics f T = 1100 MHz Typ
- High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 p F Typ
- Suitable for wide band video amplifier
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
Ordering Information h FE 2SC4829B 2SC4829C 60 to 120 100 to 200
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C (peak) PC Tj Tstg Ratings 100 100 3 0.2 0.5 0.9 150
- 55 to +150 Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio 2SC4829B 2SC4829C Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I EBO I CBO h FE h FE VBE VCE(sat) f T Cob Min 100 100
- - 60 100
- - 800
- Typ
- -
- -
- -
- - 1100 4.2 Max
- - 10 1.0 120 200 1.0 1.0
- 6.0 V V MHz p F VCE = 10 V, IC = 10 m A I C = 100 m A, IB = 10 m A VCE = 10 V, IE = 100 m A VCB = 30 V, IE = 0, f = 1 MHz Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ VEB = 3 V, IC = 0 VCB = 80 V, IE = 0 VCE = 10 V, IC = 10 m A
Maximum Collector Dissipation Curve 1.6 Collector Power Dissipation Pc (W) 50 I C (m A) 400 µA 350 µA 300 µA 250 µA 200 µA 20 150 µA 100 µA 50 µA IB = 0 4 6 8 10 2 Collector to Emitter Voltage V CE (V) Typical Output Characteristics
Collector Current 50 100 150 Ambient Temperature Ta (°C) 200
DC Current Transfer Ratio vs. Collector Current VCE = 10 V Pulse test Collector to Emitter Saturation Voltage VCE(sat) (V) 1000 DC Current Transfer Ratio h FE 500 1.0 0.5
Collector to Emitter Saturation Voltage vs. Collector Current I C / I B = 10 Pulse test
200 100...
