2SC4913
2SC4913 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage
- V(BR)CEO = 2000 V min
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg Ratings 2000 2000 6 20 40 1.5 150
- 55 to +150 Unit V V V m A m A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol I CES I CEO I EBO h FE VCE(sat) Min
- -
- 10
- Typ
- -
- -
- Max 500 5 500
- 5.0 V Unit µA m A µA Test conditions VCE = 2000 V, RBE = 0 VCE = 2000 V, RBE = ∞ VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 m A I C = 10 m A, IB = 2 m A
Maximum Collector Power Dissipation Curve 2.0 Collector Power Dissipation Pc (W) 100
Area of Safe Operation
1 shot pulse I C (m A) 50 20 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max
Ta = 25°C ms =1 on Pw ms ati er ) 10 Op 25°C DC c = (T
50 100 150 200 Ambient Temperature Ta (°C)
Collector Current
DC Current Transfer Ratio vs. Collector Current 100 DC Current Transfer Ratio h FE
A 1m m A 0.8 A 0.6 m
Typical Output Characteristics 10 I C (m A)
Tc = 75°C
25°C
20 10 5
- 25°C
Collector...
