Download 2SC4964 Datasheet PDF
Hitachi Semiconductor
2SC4964
2SC4964 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features - Low Ron and high performance for RF switch. - Capable of high density mounting. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 12 8 3 100 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance On resistance Note: Marking is “YV- ”. I EBO h FE VCE(sat) Cob Ron Min 12 - - - 100 - - - Typ - - - - 250 200 1.2 2.0 Max - 1 1 10 600 300 1.6 - m V p F Ω Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 3 V, IC = 0 VCE = 5 V, IC = 5 m A I C = 80 m A, IB = 5 m A VCB = 5 V, IE = 0, f = 1 MHz I B = 2.5 m A, f = 1 k Hz DC Current Transfer Ratio vs. Collector Current 500 DC Current Transfer Ratio h FE VCE = 5V Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 100 0 1 50 100 Ambient Temperature Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 2 5 10 20 50 Collector Current I C (m A) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 2.0 Gain Bandwidth Product f T (GHz) IE = 0 f = 1 MHz VCE = 5V...