2SC4988
2SC4988 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 8.5 GHz Typ
- High gain, low noise figure PG = 10.5 d B Typ, NF = 1.3 d B Typ at f = 900 MHz
Outline
UPAK
1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 100 800- 150
- 55 to +150
Unit V V V m A m W °C °C
1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “FR”. I EBO h FE Cob f T PG NF Min 15
- -
- 50
- 5.5 7.5
- Typ
- -
- - 120 1.1 8.5 10.5 1.3 Max
- 1 1 10 250 1.6
- - 2.5 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Collector Power Dissipation Curve Collector Power Dissipation Pc (m W) (on the alumina ceramic board) 1600 200 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current
40 0
Ambient Temperature Ta...
