2SC4995 Datasheet | Hitachi Semiconductor

Features - High gain bandwidth product f T = 11 GHz Typ - High gain, low noise figure PG = 16.5 d B Typ, NF = 1.1 d B Typ at f = 900 MHz Outline CMPAK- 4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltge Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product S21 Parameter Power gain Noise figure Note: Marking is “YD- ”. I EBO h FE Cob f T |S21| PG NF Min 15 - - - 50 - 8.0 - 13.5 - Typ - - - - 120 0.55 11.0 16 16.5 1.1 Max - 10 1 10 250 1.05 - - - 2.0 p F GHz d B d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 1000 MHz VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor. DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio h FE VCE = 5V Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 120 100 80 60 40 20 40 0 1 50 100 150 Ambient Temperature Ta (°C) 2 5 10 20 Collector Current I C (m A) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 12 Gain Bandwidth Product f T (GHz) VCE = 5 V 10 8 VCE = 1 V 6 4 2 0 1 2 5 10 20 Collector Current I C (m A) 50 0.9 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 0.5...