2SC5218
2SC5218 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 9 GHz typ
- High gain, low noise figure PG = 13.0 d B typ, NF = 1.2 d B typ at f = 900 MHz
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YK- ”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150
- 55 to +150 Unit V V V m A m W °C °C
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO h FE Cob f T PG NF Min 15
- -
- 50
- 6.0 10
- Typ
- -
- - 120 0.8 9.0 13 1.2 Max
- 1 1 10 250 1.4
- - 2.5 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz
DC Current Transfer Ratio vs. Collector Current 200
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150
DC Current Transfer Ratio h FE
40 0 0.1
VCE = 5 V Pulse Test 1 10 Collector Current I C (m A) 100
50 100 150 Ambient Temperature Ta (°C)
10 Gain Bandwidth Product f T (GHz)
VCE = 5V 8
Collector Output Capacitance Cob (p F)
Gain Bandwidth Product vs. Collector Current
2.0 1.6
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1...
