2SC5247 Datasheet | Hitachi Semiconductor

Features - High gain bandwidth product f T = 13.5 GHz typ - High gain, low noise figure PG = 17 d B typ, NF = 1.2 d B typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “ZD- ”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 80 150 - 55 to +150 Unit V V V m A m W °C °C Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO h FE Cob f T PG NF Min 15 - - - 50 - 10.5 14 - Typ - - - - 100 0.47 13.5 17 1.2 Max - 1 1 10 160 0.75 - - 2.5 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 4 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 4 V, IC = 20 m A VCE = 4 V, IC = 20 m A, f = 900 MHz VCE = 4 V, IC = 5 m A, f = 900 MHz Collector Power Dissipation Curve Collector Power Dissipation Pc (m W) 160 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 200 40 0 0.01 VCE = 4 V Pulse Test 0.1 1 10 100 50 100 150 Ambient Temperature Ta (°C) Collector Current I C (m A) 20 Gain Bandwidth Product f T (GHz) VCE = 4V 16 Collector Output Capacitance Cob (p F) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1...