2SC5449
2SC5449 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCBO = 1500 V
- High speed switching tf = 0.15 µsec (typ.) at f H = 64 k Hz
- Isolated package TO- 3PFM
Outline
TO- 3PFM
2 3
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg
Note1
Ratings 1500 700 6 12 24 50 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter breakdown voltage Emitter to base breakdownvoltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturationvoltage Base to emitter saturationvoltage Fall time Fall time Symbol V(BR)CEO V(BR)EBO ICES h FE1 h FE2 VCE(sat) VBE(sat) tf tf Min 700 6
- 10 3.5
- -
- - Typ
- -
- -
- -
- 0.2 0.15 Max
- - 500 30 6.5 5 1.5 0.4
- V V µs µs Unit V V µA Test Conditions IC = 10m A, RBE = ∞ IE = 10m A, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 7A IC = 7A, IB = 1.8A IC = 7A, IB = 1.8A ICP = 6A, IB1 = 2A f H = 31.5k Hz ICP = 6A, IB1 = 1.5A f H = 64k Hz
Main Characteristics
Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200
Area of Safe Operaion
0.1 100 5000 1000 10 Collector to Emitter Voltage V CE(V)
L = 180 µH I B2 =
- 1 A duty < 1 % Tc = 25°C
Typical Output Characteristics 10
2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A
DC Current Transfer Ratio vs. Collector Current 100
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