Download 2SC5543 Datasheet PDF
Hitachi Semiconductor
2SC5543
2SC5543 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features - Super pact package; (1.4 × 0.8 × 0.59mm) - Capable low voltage operation ; (V CE = 1V) Outline MFPAK 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YA-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 8 1.5 20 80 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol I CBO I CEO I EBO h FE Cob f T PG NF Min - - - 85 - 5.5 11 - Typ - - - - 0.51 8.5 13.7 1.1 Max 10 1 10 170 0.9 - - 2.5 Unit µA m A µA V p F GHz d B d B Test Conditions VCB = 15V , IE = 0 VCE = 8V , RBE = ∞ VEB = 1.5V , IC = 0 VCE = 1V , IC = 5m A VCB = 1V , IE = 0 f = 1MHz VCE = 1V , IC = 5m A VCE = 1V, IC = 5m A f = 900MHz VCE = 1V, IC = 5m A f = 900MHz Maximum Collector Dissipation Curve 160 Collector Power Dissipation Pc (m W) DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs. Collector Current VCE = 1 V 0 0 50 100 150 200 1 2 5 10 20 50 100 Ambient Temperature Ta (°C) Collector Current I C (m A) Collector Output Capacitance Cob (p F) Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz 10 Gain Bandwidth Product f T (GHz) Gain Bandwidth Product vs. Collector Current VCE = 1 V 6...