2SC5545 Datasheet | Hitachi Semiconductor

Features - Excellent inter modulation characteristic - High power gain and low noise figure ; PG=16d B typ. , NF=1.1d B typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note: Marking is “ZS-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO h FE Cob f T PG NF Min 15 - - - 80 - 10 14 - Typ - - - - 120 0.69 12.6 16 1.1 Max - 1 1 10 160 1.1 - - 2.0 Unit V µA m A µA V p F GHz d B d B Test Conditions I C = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 6V , RBE = Åá VEB = 1.5V , IC = 0 VCE = 3V , IC = 20m A VCB = 3V , IE = 0 f = 1MHz VCE = 3V , IC = 20m A VCE = 3V, IC = 20m A f = 900MHz VCE = 3V, IC = 5m A f = 900MHz Main Characteristics Maximum Collector Dissipation Curve 200 Pc (m W) h FE 200 DC Current Transfer Ratio vs. Collector Current VCE = 3 V Collector Power Dissipation DC Current Transfer Ratio 50 100 150 Ta (°C) 200 0 0 1 2 5 10 20 50 100 Ambient Temperature Collector Current IC (m A) (p F) Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz 20 (GHz) Gain Bandwidth Product vs. Collector Current VCE = 3...