2SC5555
2SC5555 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- Super pact package; (1.4 × 0.8 × 0.59mm)
- Capable low voltage operation ; (V CE = 1V)
Outline
MFPAK
1 2
1. Emitter 2. Base 3. Collector
Note: Marking is “ZD-”.
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 8 1.5 50 80 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO h FE Cob f T PG NF Min 15
- -
- 50
- 6 11
- Typ
- -
- - 100 0.55 9 14 1.1 Max
- 1 1 10 160 0.85
- - 2.0 Unit V µA m A µA V p F GHz d B d B Test Conditions I C = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 8V , RBE = Åá VEB = 1.5V , IC = 0 VCE = 1V , IC = 5m A VCB = 1V , IE = 0 f = 1MHz VCE = 1V , IC = 5m A VCE = 1V, IC = 5m A f = 900MHz VCE = 1V, IC = 5m A f = 900MHz
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 160 DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs. Collector Current VCE = 1 V
0 0 50 100 150 200 1 2 5 10 20 50 100
Ambient Temperature Ta (°C)
Collector Current I C (m A)
(p F)
Collector Output Capacitance vs. Collector to Base Voltage
IE = 0 f = 1MHz
20 Gain Bandwidth Product f T (GHz)
Gain Bandwidth Product vs. Collector Current VCE = 1 V
Collector Output Capacitance...
