2SC5593 Datasheet | Hitachi Semiconductor

Features - High gain bandwidth product f T = 23 GHz typ. - High power gain and low noise figure ; PG = 18 d B typ. , NF = 1.8 d B typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “XH-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.5 1 12 50 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO h FE Cob f T PG NF Min 12 - - - 60 - 20 14 - Typ - - - - 100 0.16 23 18 1.8 Max - 1 1 12 140 0.4 - - 2.3 Unit V µA µA µA V p F GHz d B d B Test Conditions I C = 10 µA , IE = 0 VCB = 10 V , IE = 0 VCE = 4 V , RBE = ∞ VEB = 1 V , IC = 0 VCE = 2 V , IC = 10 m A VCB = 2 V , IE = 0 f = 1 MHz VCE = 2 V , IC = 10 m A f = 2 GHz VCE = 2 V , IC = 10 m A f = 1.8 GHz VCE = 2 V , IC = 3 m A f = 1.8 GHz Main Characteristics Collector Power Dissipation Curve Pc (m W) 200 h FE 200 DC Current Transfet Ratio vs. Collector Current Collector Power Dissipatio DC Current Transfer Ratio VCE = 3 V 2V 1V 0 0 50 100 150 Ta (°C) 200 1 2 5 10 20 IC 50 (m A) 100 Ambient Temperature Collector Current (p F) Cob IE = 0 f = 1MHz (GHz) Collector Output Capacitance vs. Collector to Base...