2SD1209K Datasheet | Hitachi Semiconductor

2SD1209(K) Silicon NPN Epitaxial, Darlington Application - Low frequency power amplifier - plementary pair with 2SA1193(K) Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings 60 60 7 1 2 0.9 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test Symbol V(BR)CBO I CEO I EBO h FE VCE(sat) VBE(sat) Min 60 - - 4000 - - Typ - - - - - - Max - 100 100 - 1.5 2.0 V V Unit V µA µA Test conditions I C = 0.1 m A, IE = 0 VCE = 60 V, RBE = ∞ VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A- 1 I C = 500 m A, IB = 0.5 m A- 1 I C = 500 m A, IB = 0.5 m A- 1 2SD1209(K) Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) Area of Safe Operation 10 5 i C(peak) Ta = 25°C 1 Shot Pulse 2 1.0 0.5 =1 ms 0.4 ms 0.2 0.1 10 20 50 100 1.0 2 5 Collector to Emitter Voltage VCE (V) 100 150 50 Ambient Temperature Ta (°C) Typical Output Characteristics 0.5 Ta = 25°C Pulse 16 14 12 10...