2SD1306 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 - 55 to +150 Unit V V V A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 - 1 Typ - - - - - - - 250 Max - - - 1.0 800 1.0 0.5 - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 m A- 2 VCE = 1 V, IC = 150 m A- 2 I C = 500 m A, IB = 50 m A- 2 VCE = 1 V, IC = 150 m A- 2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product V(BR)EBO I CBO h FE- VBE VCE(sat) f T - - - V V MHz Notes: 1. The 2SD1306 is grouped by h FE as follows. 2. Pulse test Grade Mark h FE D ND 250 to 500 E NE 400 to 800 See characteristic curves of 2SD1504. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 100 150 50 Ambient Temperature Ta (°C) Package Dimensions As of January, 2001 Unit: mm 0.10 0.4 + -...