2SD1419 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency power amplifier - plementary pair with 2SB1026 Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC - Tj Tstg 2 1 Ratings 120 100 5 1 2 1 150 - 55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 100 5 - 1 Typ - - - - - - - - 140 12 Max - - - 10 200 - 1 1.5 - - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 150 m A- 2 VCE = 5 V, IC = 500 m A- 2 I C = 500 m A, IB = 50 m A- 2 VCE = 5 V, IC = 150 m A- 2 VCE = 5 V, IC = 150 m A- 2 VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE f T Cob 60 30 - - - - V V MHz p F Notes: 1. The 2SD1419 is grouped by h FE1 as follows. 2. Pulse test Mark h FE1 DD 60 to 120 DE 100 to 200 See characteristic curves of 2SD1418. Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic...