2SD1436 Datasheet | Hitachi Semiconductor

2SD1436(K) Silicon NPN Triple Diffused Application Power switching plementary pair with 2SB1032(K) Outline TO-3P 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 kΩ (Typ) 130 Ω (Typ) 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC - Tj Tstg Rating 120 120 7 10 15 80 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 1000 - - - - - - Typ - - - - - - - - - 0.8 4.0 Max - - 100 10 20000 1.5 3.0 2.0 3.5 - - V V V V µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 200 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 0.1 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 0.1 A- 1 I C = 5 A, IB1 = - IB2 = 10 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. h FE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 Ton Toff 2SD1436(K) Maximum Collector Dissipation Curve 120 Collector power dissipation Pc (W) 30 10 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (°C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Ta = 25°C 1 shot pulse i C (peak) Area of Safe Operation 1 µs Collector current IC...