2SD1527
2SD1527 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Rating 1000 1000 5 0.5 1.8 25 150
- 55 to +150
Unit V V V A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 1000 5
- 10 10
- -
- - Typ
- -
- -
- -
- 5 5 Max
- - 10
- - 1.2 5
- - V V MHz p F Unit V V µA Test conditions I C = 1 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 800 V, IE = 0 VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 100 m A VCE = 5 V, IC = 100 m A I C = 300 m A, IB = 60 m A VCE = 20 V, IC = 50 m A VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1 h FE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE (sat) f T Cob
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 1.0
Area of Safe Operation TC = 25°C
(50 V, 0.5 A) Collector current IC (A)
=
0.1 DC Operation (600 V, 0.042 A)
(1,000 V, 0.015 A) 0 50 100 Case temperature TC (°C) 150 0.01 30 100 300 1,000 3,000 Collector to emitter voltage VCE (V)
Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE (sat) (V) 2 IC/IB = 10 Ta = 25°C Pulse test
0 1 2 5 10 20 50 100 200 Collector current IC (m A)...
