2SD1606 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg ID- 1 1 Ratings 120 120 7 6 12 40 150 - 55 to +150 6 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 1000 - - - - - - - - Typ - - - - - - - - - - 0.6 7.0 2.0 Max - - 100 10 20000 1.5 3.0 2.0 3.5 3.0 - - - V V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 3 A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6 A, IB = 60 m A- 1 I C = 3 A, IB = 6 m A- 1 I C = 6 A, IB = 60 m A- 1 I D = 6 A- 1 I C = 3 A, IB1 = - IB2 = 6 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 10 i C (peak) Collector current IC (A) IC (max) 3 Area of Safe Operation 1 µs 0µ 10 s 1m s 1.0 0.3 0.1 Ta = 25°C 1 shot pulse...