2SD1869 Datasheet | Hitachi Semiconductor

2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA1868 160 160 5 100 0.9 150 - 55 to +150 2SA1869 200 200 5 100 0.9 150 - 55 to +150 Unit V V V m A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol 2SD1868 V(BR)CBO 2SD1869 Collector to emitter breakdown voltage 2SD1868 V(BR)CEO 2SD1869 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO Min 160 200 160 200 5 - - - - 10 V µA I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 h FE1- h FE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade h FE1 B 60 to 120 C 100 to 200 VBE VCE(sat) f T Cob Typ - Max - Unit V Test conditions I C = 10 µA, IE = 0 - - I C = 1 m A, RBE = ∞ 2SD1868 I CBO 2SD1869 DC current transfer ratio 60 30 - - - - D - - - - 140 3.8 - 1.5 2 - - V V MHz p F VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 1 m A VCE = 5 V, IC = 10 m A I C = 30 m A, IB = 3 m A VCE = 5 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1868 and 2SD1869 are grouped by h FE1 as follows. 160 to 320 2SD1868, 2SD1869 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (m A) Typical Output Characteristics...