2SD2111 Datasheet | Hitachi Semiconductor

.. Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 .. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC- Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID - 1 1 Rating 120 120 7 3 6 2 25 150 - 55 to +150 3 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 - - 1000 - - - - - Typ - - - - - - - - - - - Max - - - 10 10 20000 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 m A, IE = 0 IC = 25 m A, RBE = ∞ IE = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1.5 A- IC = 3 A, IB = 30 m A- IC = 3 A, IB = 30 m A- ID = 3 A- 1 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD IC = 1.5 A, IB = 3 m A- IC = 1.5 A, IB = 3 m A- See switching characteristic curve of...