2SD2115S Datasheet | Hitachi Semiconductor

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 3 12 S Type 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Rating 150 60 5 2 2.5 18 150 - 55 to +150 Unit V V V A A W °C °C 2SD2115(L)/(S) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 - 150 - - - Typ - - - - - - - - Max - - - 10 - 0.8 1.3 0.6 V V µs Unit V V V µA Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.5 A- 1 I C = 1.5 A, IB = 0.05 A- 1 I C = 1.5 A, IB = 0.05 A- 1 I C = 1.5 A, IB1 = - IB2 = 50 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. V(BR)EBO I CBO h FE VCE(sat) VBE(sat) tf Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3.0 Area of Safe Operation i C(peak) IC(max) Collector current IC (A) s ) 1m 5°C s =2 0m (T C =1 tion PW era Op...