2SD2121L
2SD2121L is Silicon NPN Epitaxial Planar Transistor manufactured by Hitachi Semiconductor.
2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier plementary pair with 2SB1407(L)/(S)
Outline
DPAK
4 4
3 12
S Type
1. Base 2. Collector 3. Emitter 4. Collector
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC
- Tj Tstg
Ratings 35 35 5 2.5 3 18 150
- 55 to +150
Unit V V V A A W °C °C
2SD2121(L)/(S)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5
- 1
Typ
- -
- -
- -
- -
Max
- -
- 20 320
- 1.5 1.0
Unit V V V µA
Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 35 V, IE = 0 VCE = 2 V, IC = 0.5 A- 2 VCE = 2 V, IC = 1.5 A- 2 VCE = 2 V, IC = 1.5 A- 2 I C = 2 A, IB = 0.2 A- 2
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat)
60 20
- -...
