2SD2122S Datasheet | Hitachi Semiconductor

2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier plementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 3 12 S Type 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg 2SD2122(L)/(S) 2SD2123(L)/(S) Unit 180 120 5 1.5 3 18 150 - 55 to +150 180 160 5 1.5 3 18 150 - 55 to +150 V V V A A W °C °C Electrical Characteristics (Ta = 25°C) 2SD2122(L)/(S) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SD2123(L)/(S) Min 180 160 5 - 60 30 - - - - Typ - - - - - - - - 180 14 Max - - - 10 200 - 1 1.5 - - V V MHz p F Unit V V V µA A Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 m A- 1 VCE = 5 V, IC = 500 m A- 1 I C = 500 m A, I B = 50 m A- 1 VCE = 5 V, IC = 150 m A- 1 VCE = 5 V, IC = 150 m A- 1 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 - 60 30 - -...