2SD2213 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD ID 15 kΩ (Typ) 0.5 Ω (Typ) 1 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 150 80 8 1.5 3 0.9 150 - 55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 80 8 - - 2000 5000 1000 - - - Typ - - - - - - - - - - - Max - - - 5.0 5.0 - 30000 - 1.5 2.0 3.0 V V V Unit V V V µA µA Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 65 V, IE = ∞ VCE = 2 V, IC = 0.15 A- 1 VCE = 2 V, IC = 1 A- 1 VCE = 2 V, IC = 1.5 A- 1 I C = 1 A- 1, I B = 1 m A I C = 1 A- 1, I B = 1 m A I D = 1.5 A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio h FE h FE h FE Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test VCE(sat) VBE(sat) VD Area of Safe Operation Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) 3 1 0.3 0.1 0.03 0.01 0 50 100 Ambient Temperature Ta (°C) 150 1 3 10 30 100 Collector to Emitter Voltage VCE (V) i C(peak) s 0µ 10 PW s s 1 m 10 m = Ta = 25°C 1 Shot Pulse Typical Output Characteristics 2 DC Current Transfer Ratio vs. Collector Current 100,000 DC Current Transfer Ratio h FE 30,000 10,000 3,000 1,000 300 100 0.01 0.03 0.1 0.3 1.0 3 Collector Current IC (A) °C 75 C = 25° C Ta 5° - 2 Collector Current IC...