2SD2247 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 55 50 5 100 - 100 200 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 50 5 - - Typ - - - - - - - 0.67 - 1.8 Max - - - 0.5 0.5 320 0.2 0.75 100 3.5 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 VCE = 12 V, IC = 2 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Grade h FE B 100 to 200 C 160 to 320 V(BR)EBO I CBO I EBO h FE- - - - - VCE(sat) VBE f T Cob V V Mhz p F I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A VCE = 12 V, IC = 2 m A VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD2247 is grouped by h FE as follows. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 Collector Current IC (m A) 100 Typical Output Characteristics PC = 0.2 W 1.0 0.9 0.8 0.7 0.6 0.5...