2SD2263 Datasheet | Hitachi Semiconductor

Features - Build in zener diode for surge absorb. - Suitable for relay drive with small power loss. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) ID PC Tj Tstg Ratings 25 25 6 0.5 1.0 0.5 0.5 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 26 6 - - - 100 50 - - Typ - - - - - - - - - - - Max - 35 36 - 0.2 0.5 0.2 500 - 0.5 1.2 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I C = 0.5 A, RBE = ∞, L = 20 m H I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 50 m A- 1 VCE = 2 V, IC = 0.5 A- 1 I C = 0.5 A- 1, I B = 50 m A I E = 0.5 A- 1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current V CEO (sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio I EBO h FE1 h FE2 Collector to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test VCE(sat) VD Maximum Collector Dissipation Curve Collector Power Dissipation Pc (W) 0.8 Collector Current IC (A) Area of Safe Operation 3 i C (peak) 1 1 s m 0.3 0.1 0.03 0.01 IC (max) D (T C O C = per 25 at °C ion ) Ta = 25°C, 1 Shot Pulse 50 100 150 200 Ambient Temperature Ta (°C) 0.003 0.1 0.3 1 3 10 30 100 Collector to Emitter Voltage VCE (V) = 10 m s Typical Output Characteristics 0.5 PW = 0.5 W 1.8 Collector Current IC (A)...