2SD2300
2SD2300 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCBO = 1500 V
- Built-in damper diode type
Outline
TO-3PFM
1. Base 2. Collector 3. Emitter
1 ID
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC- Tj Tstg ID
Ratings 1500 6 5 6 16 50 150
- 55 to +150 6
Unit V V A A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES h FE VCE(sat) VBE(sat) VECF tf Min 6
- -
- -
- - Typ
- -
- -
- -
- Max
- 500 20 5 1.5 3.0 1.0 V V V µs Unit V µA Test conditions IE = 350 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 4.5 A, IB = 1.2 A IC = 4.5 A, IB = 1.2 A IF = 6 A ICP = 4 A, IB1 = 0.8 A, IB2 ≈
- 1.5 A
Area of Safe Operation 20 (100 V, 16 A) f = 15.75 k Hz Ta = 25°C For picture tube arcing
Collector current IC (A)
(800 V, 3 A) 0.5 m A
800 1,200 1,600 2,000 400 Collector to emitter voltage VCE (V) Maximum Collector Dissipation Curve
60 Collector power dissipation PC (W)
50 100 Case temperature TC (°C) Typical Output Characteristecs...
