2SD467
2SD467 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
- Low frequency power amplifier
- plementary pair with 2SB561
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings 25 20 5 0.7 1.0 0.5 150
- 55 to +150 Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5
- 1
Typ
- -
- -
- 0.19 0.76 280 12
Max
- -
- 1.0 240 0.5 1.0
- -
Unit V V V µA
Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test)
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to170 C 120 to 240 V(BR)EBO I CBO h FE-
- -
- -
VCE(sat) VBE f T Cob
V V MHz p F
I C = 0.5 A, IB = 0.05 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCB = 10 V, IE = 0, f = 1 MHz
1. The 2SD467 is grouped by h FE as follows.
Typical Output Characteristics Maximum Collector Dissipation Curve 0.6 Collector Power Dissipation PC (W) Collector Current IC (m A) 400 500 2.5
2.0 1.5 1.0
= 5 0....
