2SD468
2SD468 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
- Low frequency power amplifier
- plementary pair with 2SB562
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150
- 55 to +150 Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5
- 1
Typ
- -
- -
- 0.2 0.79 190 22
Max
- -
- 1.0 240 0.5 1.0
- -
Unit V V V µA
Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 0.5 A- 2 I C = 0.8 A, IB = 0.08 A- 2 VCE = 2 V, IC = 0.5 A- 2 VCE = 2 V, IC = 0.5 A- 2 VCB = 10 V, IE = 0, f = 1 MHz
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO h FE-
- -
- -
VCE(sat) VBE f T Cob
V V MHz p F
Notes: 1. The 2SD468 is grouped by h FE as follows. 2. Pulse test B 85 to170 C 120 to 240
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (m A) 1,000 7 6 600 5 4 400 3 2 200 1m A IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 0.4 0.8 1.2 1.4 1.6 Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
=
0.
Typical Transfer Characteristics 1,000 VCE = 2 V Collector Current IC (m A) 300 100 30 10 3 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Ta = 75°C 25°C DC Current Transfer Ratio h FE 5,000 2,000 1,000 500 200 100 50 20 10 5...
