2SD787 Datasheet | Hitachi Semiconductor

2SD787, 2SD788 Silicon NPN Epitaxial Application - Low frequency power amplifier - plementary pair with 2SB738 and 2SB739 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD787, 2SD788 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD787 20 16 6 2 0.9 150 - 55 to +150 2SD788 20 20 6 2 0.9 150 - 50 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) 2SD787 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 2SD788 Max - - - 2 0.2 800 0.3 - - Min 20 20 6 - - 100 - - - Typ - - - - - - - 100 20 Max - - - 2 0.2 800 0.3 - - V MHz p F Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1 A I C = 1 A, IB = 0.1 A VCE = 2 V, I C = 10 m A VCB = 10 V, IE = 0, f = 1 MHz Typ - - - - - - - 100 20 20 16 6 - - 100 - - - DC current transfer ratio h FE- Collector to emitter saturation voltage VCE(sat)...