2SD974
2SD974 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
- Power switching
- TV horizontal deflection output
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Surge collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) I C(surge) PC Tj Tstg Ratings 120 60 5 1 1.5 4 0.9 150
- 55 to +150 Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 60 5
- 150
- -
- Typ
- -
- -
- -
- 0.4 Max
- -
- 1.0
- 0.3 1.2
- V MHz p F I CP = 1 A, IB1 =
- IB2 = 50 m A- 1 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1 A- 1 I C = 1 A, IB = 0.05 A- 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test V(BR)EBO I CBO h FE VCE(sat) VBE(sat) tf
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) Area of Safe Operaton 6 5 4 3 2 1 (20 V, 4 A) f = 15.75 k Hz Ta = 25°C
(60 V, 0.5 A) 50 100 150 Collector to Emitter Voltage VCE (V)
50 100 150 Ambient Temperature Ta (°C)
Typical Output Characteristics 0.5 5 4 3 DC Current Transfer Ratio h FE Collector Current IC (A) 0.4 2 1.5 0.3 1 0.2 0.5 m A 0.1 IB = 0 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) 500 200 100 50 1,000
DC Current Transfer Ratio vs. Collector Current 75 25 Ta =
- 25°C
VCE = 5 V Pulse
20 10 0.02
0.05 0.1 0.2 0.5 1.0 Collector Current IC (A)
0.1 m A re ictu ing r P Fo e Arc b Tu
Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage...
