2SJ172
2SJ172 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- - Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
3 1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg
2 1
Ratings
- 60 ±20
- 10
- 40
- 10 40 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS
- 60 ±20
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- 1.0
- - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0
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- Typ
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- 0.13 0.18 6.5 900 460 130 8 65 170 105
- 1.1 200 Max
- - ±10 250
- 2.0 0.18 0.25
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- - S p F p F p F ns ns ns ns V ns I F...