Download 2SJ172 Datasheet PDF
Hitachi Semiconductor
2SJ172
2SJ172 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB 3 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 60 ±20 - 10 - 40 - 10 40 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS - 60 ±20 - - - 1.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 - - - - - - - - - Typ - - - - - 0.13 0.18 6.5 900 460 130 8 65 170 105 - 1.1 200 Max - - ±10 250 - 2.0 0.18 0.25 - - - - - - - - - - S p F p F p F ns ns ns ns V ns I F...