2SJ175
2SJ175 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- - Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)- IDR Pch- Tch Tstg
2 1
Ratings
- 60 ±20
- 10
- 40
- 10 25 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on)
- 60 ±20
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- 1.0
- - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.0
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- Typ
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- 0.13 0.18 6.5 900 460 130 8 65 170 105
- 1.1 200 Max
- - ±10
- 250
- 2.0 0.18 0.25
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