2SJ245
2SJ245 is Silicon P-Channel MOS FET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance
- High speed switching
- Low drive current
- 4 V gate drive device can be driven from 5 V source
- Suitable for switching regulator, DC-DC converter
Outline
DPAK-1
4 4
1 23
12 3
1. Gate
2. Drain
3. Source
4. Drain
November 1996
2SJ245(L), 2SJ245(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I
- 1
D(pulse)
IDR Pch- 2 Tch Tstg
Ratings
- 60 ±20
- 5
- 20
- 5 20 150
- 55 to +150
Unit V V A A A W °C °C
2SJ245(L), 2SJ245(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS...
