• Part: 2SJ245S
  • Description: Silicon P-Channel MOS FET
  • Manufacturer: Hitachi Semiconductor
  • Size: 54.09 KB
Download 2SJ245S Datasheet PDF
Hitachi Semiconductor
2SJ245S
2SJ245S is Silicon P-Channel MOS FET manufactured by Hitachi Semiconductor.
- Part of the 2SJ245 comparator family.
Features - Low on-resistance - High speed switching - Low drive current - 4 V gate drive device can be driven from 5 V source - Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SJ245(L), 2SJ245(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I - 1 D(pulse) IDR Pch- 2 Tch Tstg Ratings - 60 ±20 - 5 - 20 - 5 20 150 - 55 to +150 Unit V V A A A W °C °C 2SJ245(L), 2SJ245(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS...