2SJ317 Datasheet | Hitachi Semiconductor

Features - Very low on-resistance - High speed switching - Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 12 - 7 ±2 ±4 2 1 150 - 55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm). 3. Marking is “NY”. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff current Symbol Min V(BR)DSS V(BR)GSS I GSS - 12 ±7 - - - 0.4 - - 1.0 - - - - - Typ - - - - - 0.4 0.28 2.3 63 180 23 500 2860 Max - - ±5 - 1 - 1.4 0.7 0.35 - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns I D = - 0.2 A- 1, Vin = - 4 V, RL = 51 Ω Test conditions I D = - 1 m A, VGS = 0 I G = ±10 µA, VDS = 0 VGS = ±6.5 V, VDS = 0 VDS = - 8 V, VGS = 0 I D = - 100 µA, VDS = - 5 V I D = - 0.5 A- 1, VGS...