2SJ351
2SJ351 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good plementary characteristics Equipped with gate protection diodes
Ordering Information
Type No. 2SJ351 2SJ352 VDSX
- 180 V
- 200 V
2SJ351, 2SJ352
Outline
TO-3P
D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SJ351 2SJ352 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch- Tch Tstg
Symbol VDSX
Ratings
- 180
- 200 ±20
- 8
- 8 100 150
- 55 to +150
Unit V
V A A W °C °C
2SJ351, 2SJ352
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage 2SJ351 2SJ352 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX
- 180
- 200 ±20
- 0.15
- 0.7
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- Typ
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- 1.0 800 1000 18 320 120...
