2SJ386 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod 1 1. Source 2. Drain 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)- I DR Pch Tch Tstg Ratings - 30 ±20 - 3 - 5 - 3 0.9 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min - 30 ±20 - - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 1.0 - - - - - - - Typ - - - - - 0.3 0.55 1.7 177 120 59 8 28 45 60 Max - - ±10 - 10 - 2.5 0.4 0.8 - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns Test conditions I D = - 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS...