2SJ506 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = - 10V, ID = - 5A) - Low drive current - High speed switching - 4V gate drive devices. Outline DPAK- 2 4 D 1 2 G 1 2 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings - 30 ±20 - 10 - 40 - 10 20 150 - 55 to +150 Unit V V A A A W °C °C 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 30 ±20 - - - 1.0 - - 10 - - - - - - - - -...