Download 2SJ553 Datasheet PDF
Hitachi Semiconductor
2SJ553
2SJ553 is Silicon P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - Low on-resistance R DS(on) = 0.028 Ω typ. - Low drive current. - 4V gate drive devices. - High speed switching. Outline LDPAK 4 D 1 G 1 4 1. Gate 2. Drain 3. Source 4. Drain 2SJ553(L),2SJ553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings - 60 ±20 - 30 - 120 - 30 Unit V V A A A A m J W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 - 30 77 75 150 - 55 to +150 Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min - 60 ±20 - - - 1.0 - - 15 - - - -...