2SJ79 Datasheet | Hitachi Semiconductor

Features - - - - Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 3 1. Gate 2. Source (Flange) 3. Drain 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch- Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg Symbol VDSX Ratings - 140 - 160 - 180 - 200 ±15 - 500 - 500 1.75 30 150 - 45 to +150 Unit V V m A m A W W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol Min V(BR)DSX - 140 - 160 - 180 - 200 ±15 - 0.2 - 20 - - Typ - - - - - - - 35 120 4.8 Max - - - - - - 1.5 -...