2SK1070 Datasheet | Hitachi Semiconductor

Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings - 22 - 22 50 10 150 150 - 55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate cutoff current Gate to source breakdown voltage Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Note: Grade Mark I DSS B PIB 6 to 14 C PIC 12 to 22 Symbol I GSS V(BR)GSS I DSS- 1 VGS(off) y fs Ciss Min - - 22 6 0 20 - D PID 18 to 30 Typ - - - - 30 9 E PIE 27 to 40 Max - 10 - 40 - 2.5 - - Unit n A V m A V m S p F Test conditions VGS = - 15 V, VDS = 0 I G = - 10 µA, VDS = 0 VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 k Hz VDS = 5 V, VGS = 0, f = 1 MHz 1. The 2SK1070 is grouped by I DSS as follows. See characteristic curves of 2SK435. Maximum Channel Dissipation Curve Channel Power Dissipation Pch (m W) 150 50 100 150 Ambient Temperature Ta (°C) Unit: mm 0.10 3 - 0.4 + - 0.05 - 0.06 +...