2SK1299 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 100 ±20 3 12 3 20 150 - 55 to +150 Unit V V A A A W °C °C 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.4 - - - - - - - - - Typ - - - - - 0.25 0.30 4.0 400 165 45 5 35 160 60 1.0 135 Max - - ±10 100 2.0 0.35 0.45 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 3 A, VGS = 0 I F = 3 A, VGS = 0, di F/dt = 50 A/µs I D = 2 A, VGS = 10 V, RL = 15 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 2 A, VGS = 10 V - 1 I D = 2 A, VGS = 4 V 1- I D = 2 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static Drain to source on state resistance VGS(off)...