2SK1304 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 100 ±20 40 160 40 100 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 - - - - - - - - - Typ - - - - - 0.025 0.03 35 3500 1400 340 25 170 730 300 1.2 300 Max - - ±10 250 2.0 0.03 0.04 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 40 A, VGS = 0 I F = 40 A, VGS = 0, di F/dt = 50 A/µs I D = 20 A, VGS = 10 V, RL = 1.5 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 20 A, VGS = 10 V - 1 I D = 20 A, VGS = 4 V - 1 I D = 20 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 500 200 Drain Current ID (A) 100 50 Maximum Safe Operation Area Operation in this...