2SK1307 Datasheet | Hitachi Semiconductor

Features - Low on-resistance - High speed switching - 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 100 ±20 20 80 20 35 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 - - - - - - - - - Typ - - - - - 0.065 0.085 16 1300 540 160 12 100 300 150 1.3 300 Max - - ±10 250 2.0 0.085 0.12 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, di F/dt = 50 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 10 A, VGS = 10 V - 1 I D = 10 A, VGS = 4 V - 1 I D = 10 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) See characteristic curves of 2SK1302. Power vs. Temperature Derating 60 Channel Dissipation Pch (W)...