2SK1318 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM 2 3 1. Gate 2. Drain 3. Source 2SK1318 .. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D (peak)- I DR Pch- 2 Tch Tstg Ratings 120 ±20 20 80 20 35 150 - 55 to +150 Unit V V A A A W °C °C .. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) Min 120 ±20 - - 1.0 - - 10 - - - - - - - - - Typ - - - - - 0.095 0.11 17 1300 430 60 14 70 210 90 1.4 280 Max - - ±10 250 2.0 0.12 0.16 Å Å - - - - - - - - S p F p F p F ns ns ns ns V ns I F = 20A, VGS = 0 I F = 20A, VGS = 0, di F / dt = 50A / µs I D = 10A, VGS = 10V, RL = 3 Unit V V µA µA V Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 100V, VGS = 0 I D = 1m A, VDS = 10V I D = 10A, VGS = 10V- 1 I D = 10A, VGS = 4V- 1 I D = 10A, VDS = 10V- 1 VDS = 10V, VGS = 0, f = 1MHz 2SK1318 .. Main Characteristics Power vs. Temperature Derating 60 Channel Dissipation Pch (W)...