Download 2SK1400 Datasheet PDF
Hitachi Semiconductor
2SK1400
2SK1400 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB 3 1. Gate 2. Drain (Flange) 3. Source 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1400 2SK1400A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Symbol VDSS Ratings 300 350 ±30 7 28 7 50 150 - 55 to +150 Unit V V A A A W °C °C 2SK1400, 2SK1400A Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1400 K1400A V(BR)GSS I GSS I DSS Symbol Min V(BR)DSS 300 350 ±30 - - Typ - - - - - Max - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 240 V, VGS = 0 VDS = 280 V, VGS = 0 VGS(off) RDS(on) 2.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0 - - - - - - - - - - 0.50 0.60 5.0 635 230 40 10 50 60 40 1.0 240 3.0 0.70 0.80 - - - - - - - - - - S p F p F p F ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, di F/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω I D = 4 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 m A, VDS = 10 V I D = 4 A, VGS = 10...