2SK1622L
2SK1622L is Silicon N-Channel MOS FET manufactured by Hitachi Semiconductor.
- Part of the 2SK1622 comparator family.
- Part of the 2SK1622 comparator family.
Features
- Low on-resistance
- High speed switching
- Low drive current
- 4 V gate drive device
Can be driven from 5 V source
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
LDPAK
123 D
12 3
1. Gate 2. Drain 3. Source 4. Drain
2SK1622(L), 2SK1622(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I
- 1
D(pulse)
IDR Pch- 2 Tch Tstg
Ratings 60 ±20 25 100 25 50 150
- 55 to +150
Unit V V A A A W °C °C
2SK1622(L), 2SK1622(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static Drain to source on state RDS(on) resistance
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