2SK1666 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current Low voltage drive device  Can be driven from 4 V - Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 60 ±20 45 180 45 60 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 20 - - - - - - - - - Typ - - - - - 0.016 0.022 32 3950 1920 360 30 180 630 290 1.3 140 Max - - ±10 250 2.5 0.02 0.035 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 45 A, VGS = 0 I F = 45 A, VGS = 0, di F/dt = 50 A/µs I D = 20 A, VGS = 10 V, RL = 1.5 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 20 A, VGS = 10 V - 1 I D = 20 A, VGS = 4 V - 1 I D = 20 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Maximum Safe Operation Area Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (A) 500 300 100 30 10 3 1 0 50 100 150 0.5 0.1 Ta =...